Samsung Announces the Availability of its State-of-the-Art 2.5D “H-Cube” Integration Solution for High Performance Applications

“H-Cube” applies advanced silicon interposer technology and hybrid substrate structure, enabling efficient integration of 6 HBMs, as well as reduced cost

Samsung Electronics, a global leader in advanced semiconductor technology, today announced it has developed Hybrid-Substrate Cube (H-Cube) technology, its latest 2.5D packaging solution specializing in semiconductors for HPC , AI, data center and network products that require high-performance and large-area packaging technology.

“The H-Cube solution, which is jointly developed with Samsung Electro-Mechanics (SEMCO) and Amkor Technology, is suitable for high-performance semiconductors that need to integrate a large number of silicon chips,” said Moonsoo Kang, vice Senior Chairman and Director of the Foundry Market Strategy Team at Samsung Electronics. “By expanding and enriching the foundry ecosystem, we will provide a variety of holistic solutions to find a breakthrough in the challenges our customers face. “

“In today’s environment where system integration is increasingly required and substrate supplies limited, Samsung Foundry and Amkor Technology have successfully co-developed H-Cube to overcome these challenges,” said JinYoung Kim, Senior Vice President of the Global R&D Center at Amkor Technology. “This development lowers barriers to entry into the HPC / AI market and demonstrates a successful collaboration and partnership between the foundry and the Outsourced Semiconductor Testing and Assembly (OSAT) company.”

Structure and characteristics of the H-Cube

The 2.5D package allows logic chips or high bandwidth memory (HBM) to be placed on top of a silicon interposer in a small form factor. Samsung’s H-Cube technology includes a hybrid substrate combined with a fine pitch substrate that is capable of fine bump connection, and a high density interconnect (HDI) substrate, to implement large sizes in a 2.5 package. D.

With the recent increase in specifications required in the HPC, AI, and networking application market segments, large-area packaging is becoming important as the number and size of chips mounted in a single package increases. or that high bandwidth communication is required. For the attachment and connection of silicon matrices, including the interposer, fine pitch substrates are essential but the prices increase dramatically with an increase in size.

When integrating six or more HBMs, the difficulty of manufacturing the large area substrate increases rapidly, resulting in a decrease in efficiency. Samsung solved this problem by applying a hybrid substrate structure in which easy-to-process large-area HDI substrates overlap under a high-end fine-pitch substrate.

By decreasing the pitch of the solder ball, which electrically connects the chip and the substrate, by 35% compared to the conventional ball pitch, the size of the fine pitch substrate can be minimized, while adding an HDI (PCB module) substrate ) under the fine pitch. pitch substrate to secure connectivity with the system board.

In addition, to improve the reliability of the H-Cube solution, Samsung has applied its proprietary signal / power integrity analysis technology which can supply power stably while minimizing the loss or signal distortion when stacking multiple logic and HBM chips.

In the future, in cooperation with its ecosystem partners, Samsung will hold its 3^rd “Annual Samsung Advanced Foundry Ecosystem Forum (SAFE ™)” annual virtually November 17 (PST).

To pre-register on the SAFE forum, go to https://www.samsungfoundry.com.